21 s e n s i t i v e s u rf a c e ? 0 . 4 5 l e a d 20 3 . 8 0 . 2 ? 9 . 1 0 . 2 ? 8 . 1 0 . 1 w i n d ow ? 5 . 9 0 . 1 5 . 0 8 0 . 2 SMP550G-EM prelim. 1/98 semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. mechanical d a t a dimensions in mm. p .i.n. ph o t odiode description the SMP550G-EM is a silicon p.i.n. photodiode incorporated in a hermetic metal can package. the electrical terminations are via two leads of diameter 0.018" on a pitch of 0.2". the can structure incorporates an optical filter that only transmits infra-red light. the cathode of the photodiode is electrically connected to the package. the larger photodiode active area provides greater sensitivity than the smp400 range of devices, with a corresponding reduction in speed. the photodiode structure has been optimised for high sensitivity, light measurement applications. the metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference. t o-39 p a c k age operating temperature range storage temperature range t emperature coefficient of responsi v ely t emperature coefficient of da r k current r e v erse breakd o wn v oltage -40c to +70c -45c to +80c 0.35% per c x2 per 8c r ise 60v absolute maximum r a tings (t case = 25c unles s otherwise stated) fe a tures ? visible and uv blind ? excellent linearity ? l o w noise ? wide spectral response ? l o w leak a ge current ? l o w ca p a ci t ance ? rg850 integral optical fi l ter ? t o39 hermetic me t al can p a ck a ge ? emi screening mesh a v ailable pin 1 C anode pin 2 C cathode & case
SMP550G-EM prelim. 1 /98 semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. characteristic t est conditions. min. t yp. max. units responsi v ely acti v e area da r k current breakd o wn v oltage capacitance rise time nep l at 900nm e = 0 da r k 1v r e v erse e = 0 da r k 10v r e v erse e = 0 da r k 10a r e v erse e = 0 da r k 0v r e v erse e = 0 da r k 20v r e v erse 30v r e v erse 50 w 900nm 0.45 0.55 5.19 2 4 16 22 60 80 55 10 9 19x10 -14 0.45 a/w mm 2 na v pf ns w/ ? hz char a cteristic s (t amb =25c unles s otherwise stated) directional characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 10 20 30 40 50 60 70 80 90 angle f ro m sensor to illu m ination directional characteristics 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 normalised incident power 10 20 30 40 50 60 70 80 angle from sensor to illumination s p ectral response 0 20 40 60 80 100 0 200 400 600 800 1000 1200 w avelength (n m ) relative responsivity (%) normalised incident power
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